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Infineon Technologies BSB028N06NN3 G
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BSB028N06NN3 G
Manufacturers: Infineon Technologies
Qty: 4619
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Description: MOSFET N-Channel 60V MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:60 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:90 A
Rds On - Drain-Source Resistance:2.8 mOhms
Configuration:Single Quad Drain Dual Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:108 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:78 W
Mounting Style:SMD/SMT
Package / Case:MG-WDSON-2
Packaging:Reel
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